SKM195GAL124DN IGBT Transistor

The SKM195GAL124DN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM195GAL124DN transistor as follows.

SKM195GAL124DN Transistor Specification

Transistor Code		SKM195GAL124DN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	1250W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC

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