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SKM150GM12T4G IGBT Transistor

The SKM150GM12T4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM150GM12T4G transistor as follows.

Circuit diagram symbol of the SKM150GM12T4G transistor

SKM150GM12T4G Transistor Specification

Transistor Code SKM150GM12T4G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 229A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 580
Rise Time 42

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