SKM145GB174DN IGBT Transistor

The SKM145GB174DN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM145GB174DN transistor as follows.

SKM145GB174DN Transistor Specification

Transistor Code		SKM145GB174DN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	860W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	145A
Operating Junction Temperature (Maximum)		150 oC

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