SKM100GD063DL IGBT Transistor

The SKM100GD063DL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM100GD063DL transistor as follows.

SKM100GD063DL Transistor Specification

Transistor Code		SKM100GD063DL
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	450W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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