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SKM100GB176D IGBT Transistor

The SKM100GB176D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM100GB176D transistor as follows.

Circuit diagram symbol of the SKM100GB176D transistor

SKM100GB176D Transistor Specification

Transistor Code SKM100GB176D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 125A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 280
Rise Time 40

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