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SKM100GB173D IGBT Transistor

The SKM100GB173D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM100GB173D transistor as follows.

Circuit diagram symbol of the SKM100GB173D transistor

SKM100GB173D Transistor Specification

Transistor Code SKM100GB173D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3.8V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC

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