SKM100GB12V IGBT Transistor

The SKM100GB12V is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM100GB12V transistor as follows.

SKM100GB12V Transistor Specification

Transistor Code		SKM100GB12V
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.75V
Collector Current (Maximum)	IC	159A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		590
Rise Time		38

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