SKM100GB12T4G IGBT Transistor

The SKM100GB12T4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM100GB12T4G transistor as follows.

SKM100GB12T4G Transistor Specification

Transistor Code		SKM100GB12T4G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	154A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		410
Rise Time		37

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