SKD100GAL123D IGBT Transistor

The SKD100GAL123D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKD100GAL123D transistor as follows.

SKD100GAL123D Transistor Specification

Transistor Code		SKD100GAL123D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	690W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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