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SKB10N60A IGBT Transistor

The SKB10N60A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKB10N60A transistor as follows.

Circuit diagram symbol of the SKB10N60A transistor

SKB10N60A Transistor Specification

Transistor Code SKB10N60A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 104W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.3V
Collector Current (Maximum) IC 21A

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