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SII75N12 IGBT Transistor

The SII75N12 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SII75N12 transistor as follows.

Circuit diagram symbol of the SII75N12 transistor

SII75N12 Transistor Specification

Transistor Code SII75N12
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 125 oC
Collector Capacitance 800
Rise Time 70

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