SII200N12 IGBT Transistor

The SII200N12 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SII200N12 transistor as follows.

SII200N12 Transistor Specification

Transistor Code		SII200N12
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1400W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	290A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		2000
Rise Time		80

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