SII100N12 IGBT Transistor

The SII100N12 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SII100N12 transistor as follows.

SII100N12 Transistor Specification

Transistor Code		SII100N12
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	700W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	145A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		1000
Rise Time		80

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