SIGC04T65E IGBT Transistor

The SIGC04T65E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SIGC04T65E transistor as follows.

SIGC04T65E Transistor Specification

Transistor Code		SIGC04T65E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.87V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC

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