SIGC04T60GSE IGBT Transistor

The SIGC04T60GSE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SIGC04T60GSE transistor as follows.

SIGC04T60GSE Transistor Specification

Transistor Code		SIGC04T60GSE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.05V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		28

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