SIGC04T60GS IGBT Transistor

The SIGC04T60GS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SIGC04T60GS transistor as follows.

SIGC04T60GS Transistor Specification

Transistor Code		SIGC04T60GS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		28
Rise Time		8

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