SIGC03T60E IGBT Transistor

The SIGC03T60E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SIGC03T60E transistor as follows.

SIGC03T60E Transistor Specification

Transistor Code		SIGC03T60E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		29

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