SHSMG1010 IGBT Transistor

The SHSMG1010 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SHSMG1010 transistor as follows.

SHSMG1010 Transistor Specification

Transistor Code		SHSMG1010
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SHD-6
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		200
Rise Time		250

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