SHSMG1009 IGBT Transistor

The SHSMG1009 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SHSMG1009 transistor as follows.

SHSMG1009 Transistor Specification

Transistor Code		SHSMG1009
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SHD-6
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		300
Rise Time		50

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