SHDG1025 IGBT Transistor

The SHDG1025 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SHDG1025 transistor as follows.

SHDG1025 Transistor Specification

Transistor Code		SHDG1025
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO-258
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		350
Rise Time		50

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