SGW6N60UFD IGBT Transistor

The SGW6N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGW6N60UFD transistor as follows.

SGW6N60UFD Transistor Specification

Transistor Code		SGW6N60UFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		80

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