SGW23N60UF IGBT Transistor

The SGW23N60UF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGW23N60UF transistor as follows.

SGW23N60UF Transistor Specification

Transistor Code		SGW23N60UF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

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