SGTN15C120HW IGBT Transistor

The SGTN15C120HW is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGTN15C120HW transistor as follows.

SGTN15C120HW Transistor Specification

Transistor Code		SGTN15C120HW
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		100

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