SGS6N60UFD IGBT Transistor

The SGS6N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGS6N60UFD transistor as follows.

SGS6N60UFD Transistor Specification

Transistor Code		SGS6N60UFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		80

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