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SGP6N60UFD IGBT Transistor

The SGP6N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGP6N60UFD transistor as follows.

Circuit diagram symbol of the SGP6N60UFD transistor

SGP6N60UFD Transistor Specification

Transistor Code SGP6N60UFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 80

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