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SGP30N60 IGBT Transistor

The SGP30N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGP30N60 transistor as follows.

Circuit diagram symbol of the SGP30N60 transistor

SGP30N60 Transistor Specification

Transistor Code SGP30N60
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 41A

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