SGP23N60UF IGBT Transistor

The SGP23N60UF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGP23N60UF transistor as follows.

SGP23N60UF Transistor Specification

Transistor Code		SGP23N60UF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

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