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Home » Electronics » IGBT » SGP10N60RUFD Transistor

SGP10N60RUFD IGBT Transistor

The SGP10N60RUFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGP10N60RUFD transistor as follows.

Circuit diagram symbol of the SGP10N60RUFD transistor

SGP10N60RUFD Transistor Specification

Transistor Code SGP10N60RUFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 10.0A

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