SGL60N90DG3 IGBT Transistor

The SGL60N90DG3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGL60N90DG3 transistor as follows.

SGL60N90DG3 Transistor Specification

Transistor Code		SGL60N90DG3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	900V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		250

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