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SGH23N60UFD IGBT Transistor

The SGH23N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGH23N60UFD transistor as follows.

Circuit diagram symbol of the SGH23N60UFD transistor

SGH23N60UFD Transistor Specification

Transistor Code SGH23N60UFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 100

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