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SGH20N60RUFD IGBT Transistor

The SGH20N60RUFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGH20N60RUFD transistor as follows.

Circuit diagram symbol of the SGH20N60RUFD transistor

SGH20N60RUFD Transistor Specification

Transistor Code SGH20N60RUFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 84

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