SGH10N60RUFD IGBT Transistor

The SGH10N60RUFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGH10N60RUFD transistor as follows.

SGH10N60RUFD Transistor Specification

Transistor Code		SGH10N60RUFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		110

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