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SGH10N120RUFD IGBT Transistor

The SGH10N120RUFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGH10N120RUFD transistor as follows.

Circuit diagram symbol of the SGH10N120RUFD transistor

SGH10N120RUFD Transistor Specification

Transistor Code SGH10N120RUFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 100

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