SGH10N120RUFD IGBT Transistor

The SGH10N120RUFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGH10N120RUFD transistor as follows.

SGH10N120RUFD Transistor Specification

Transistor Code		SGH10N120RUFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

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