SGF80N60UFD IGBT Transistor

The SGF80N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGF80N60UFD transistor as follows.

SGF80N60UFD Transistor Specification

Transistor Code		SGF80N60UFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PF
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		70

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