SGD06N60 IGBT Transistor

The SGD06N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGD06N60 transistor as follows.

SGD06N60 Transistor Specification

Transistor Code		SGD06N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK(TO252)
Collector Power Dissipation (Maximum)	Pc	68W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	12A

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