SGD04N60 IGBT Transistor

The SGD04N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGD04N60 transistor as follows.

SGD04N60 Transistor Specification

Transistor Code		SGD04N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK(TO252)
Collector Power Dissipation (Maximum)	Pc	50W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	9.4A

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