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SGD02N60 IGBT Transistor

The SGD02N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGD02N60 transistor as follows.

Circuit diagram symbol of the SGD02N60 transistor

SGD02N60 Transistor Specification

Transistor Code SGD02N60
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package DPAK(TO252)
Collector Power Dissipation (Maximum) Pc 30W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 6A

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