SGD02N120 IGBT Transistor

The SGD02N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGD02N120 transistor as follows.

SGD02N120 Transistor Specification

Transistor Code		SGD02N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK(TO252)
Collector Power Dissipation (Maximum)	Pc	62W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.7V
Collector Current (Maximum)	IC	6.2A

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