SGB30N60 IGBT Transistor

The SGB30N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGB30N60 transistor as follows.

SGB30N60 Transistor Specification

Transistor Code		SGB30N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK(TO263)
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	41A

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