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SGB07N120 IGBT Transistor

The SGB07N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGB07N120 transistor as follows.

Circuit diagram symbol of the SGB07N120 transistor

SGB07N120 Transistor Specification

Transistor Code SGB07N120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK(TO263)
Collector Power Dissipation (Maximum) Pc 125W
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.7V
Collector Current (Maximum) IC 16.5A

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