SGB07N120 IGBT Transistor

The SGB07N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGB07N120 transistor as follows.

SGB07N120 Transistor Specification

Transistor Code		SGB07N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK(TO263)
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.7V
Collector Current (Maximum)	IC	16.5A

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