SGB02N120 IGBT Transistor

The SGB02N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGB02N120 transistor as follows.

SGB02N120 Transistor Specification

Transistor Code		SGB02N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK(TO263)
Collector Power Dissipation (Maximum)	Pc	62W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.7V
Collector Current (Maximum)	IC	6.2A

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