SG50N06DS IGBT Transistor

The SG50N06DS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG50N06DS transistor as follows.

SG50N06DS Transistor Specification

Transistor Code		SG50N06DS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		340
Rise Time		30

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