SG35N12DT IGBT Transistor

The SG35N12DT is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG35N12DT transistor as follows.

SG35N12DT Transistor Specification

Transistor Code		SG35N12DT
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247AD
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		260
Rise Time		27

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