SG25S12DT IGBT Transistor

The SG25S12DT is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG25S12DT transistor as follows.

SG25S12DT Transistor Specification

Transistor Code		SG25S12DT
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247AD
Collector Power Dissipation (Maximum)	Pc	313W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.35V
Collector Current (Maximum)	IC	46A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		160
Rise Time		40

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