SG200N06S IGBT Transistor

The SG200N06S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG200N06S transistor as follows.

SG200N06S Transistor Specification

Transistor Code		SG200N06S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		600
Rise Time		100

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