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SG12N06P IGBT Transistor

The SG12N06P is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG12N06P transistor as follows.

Circuit diagram symbol of the SG12N06P transistor

SG12N06P Transistor Specification

Transistor Code SG12N06P
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector Power Dissipation (Maximum) Pc 100W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 24A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 100
Rise Time 20

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