SG12N06DP IGBT Transistor

The SG12N06DP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG12N06DP transistor as follows.

SG12N06DP Transistor Specification

Transistor Code		SG12N06DP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		20

UXPython is not the creator or an official representative of the SG12N06DP IGBT transistor. You can download the official SG12N06DP IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

S12N60C3 IGBT Transistor MUBW50-12T8 IGBT Transistor CT30SM-12 IGBT Transistor STGD3NB60SD IGBT Transistor HGTG20N60B3D IGBT Transistor APT50GP60J IGBT Transistor APTGT150SK170D3 IGBT Transistor IXSH30N60C IGBT Transistor MWI75-12A8 IGBT Transistor NGTB30N120IHLWG IGBT Transistor IXYA15N65C3D1 IGBT Transistor IXXH80N65B4H1 IGBT Transistor HGT1S7N60B3S IGBT Transistor IKD15N60RF IGBT Transistor APT20GT60BRG IGBT Transistor HGT1S2N120BNDS IGBT Transistor MM25G120B IGBT Transistor IGC99T120T6RL IGBT Transistor IQIB150N60B3 IGBT Transistor TGAN25N120ND IGBT Transistor