RJQ6015DPM IGBT Transistor

The RJQ6015DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJQ6015DPM transistor as follows.

RJQ6015DPM Transistor Specification

Transistor Code		RJQ6015DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM5
Collector Power Dissipation (Maximum)	Pc	50W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	37A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		120
Rise Time		40

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