RJQ6008DPM IGBT Transistor

The RJQ6008DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJQ6008DPM transistor as follows.

RJQ6008DPM Transistor Specification

Transistor Code		RJQ6008DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM5
Collector Power Dissipation (Maximum)	Pc	48W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.65V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		200
Rise Time		68

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