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RJP60F5DPM IGBT Transistor

The RJP60F5DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP60F5DPM transistor as follows.

Circuit diagram symbol of the RJP60F5DPM transistor

RJP60F5DPM Transistor Specification

Transistor Code RJP60F5DPM
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PFM
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.37V
Collector Current (Maximum) IC 80A
Rise Time 85

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